Fast Recovery Diodes (FRD)
1
Publication date: February 2008
SKJ00014CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3U649
Silicon planar type (cathode common)
For high-frequency rectification
■
Features
•
Small U-type package for surface mounting
•
Low-loss type with fast reverse recovery time t
rr
•
Cathode common dual type
■
Absolute Maximum Ratings
D.U.T
t
rr
0.1
×
I
R
I
F
I
R
50
Ω
5.5
Ω
50
Ω
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
200
V
Non-repetitive peak reverse
V
RSM
200
V
surge voltage
Forward current (Average)
*1
I
F(AV)
5
A
Non-repetitive peak forward
I
FSM
40
A
surge current
*2
Junction temperature
T
j
−
40 to
+
150
°
C
Storage temperature
T
stg
−
40 to
+
150
°
C
Note) *1: T
C
=
25
°
C
*2: Half sine-wave; 10 ms/cycle
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
2.5 A, T
C
=
25
°
C
0.98
V
Repetitive peak reverse current
I
RRM1
V
RRM
=
200 V, T
C
=
25
°
C
20
µ
A
I
RRM2
V
RRM
=
200 V, T
j
=
150
°
C
2
mA
Reverse recovery time
*2
t
rr
I
F
=
1 A, I
R
=
1 A
30
ns
Thermal resistance (j-c)
*1
R
th(j-c)
12.5
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: T
C
=
25
°
C
*2: t
rr
measurement circuit
■
Package
•
Code
U-G2
•
Pin Name
1: Anode
2: Cathode (Common)
3: Anode
