Switching Diodes
1
Publication date: March 2004
SKF00023BED
Note) *: t
=
1 s
MA3S132A
(MA132A)
, MA3S132K
(MA132K)
Silicon epitaxial planar type
For switching circuits
■
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
•
Allowing high-density mounting
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
I
F
100
mA
Peak forward current
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
1.2
V
Reverse voltage
V
R
I
R
=
100
µ
A
80
V
Reverse current
I
R
V
R
=
75 V
100
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
2
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
3
ns
I
rr
=
0.1 I
R
, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Note) The part numbers in the parenthesis show conventional part number.
Marking Symbol:
•
MA3S132A: MB
•
MA3S132K: MI
Internal Connection
1
2
3
1
2
3
EIAJ: SC-81
SSMini3-F2 Package
MA3S132A MA3S132K
1 Cathode
Anode
2 N.C.
N.C.
3 Anode
Cathode
0.28
±
0.05
3
1
2
0.28
±
0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51)
(0.51)
0 to 0.1
(0.15)
3˚
(0.44)
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±
0.05
(0.80)
1.60
±
0.05
3˚
A
K
This product complies with the RoHS Directive (EU 2002/95/EC).
