Fast Recovery Diodes (FRD)
Publication date: September 2007
SKJ00020AED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA3DF30
Silicon Mesa type
For high frequency rectification
For plasma display panel drive
Features
High switching speed t
rr
Soft recovery
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
300
V
Non-repetitive peak reverse surge voltage
V
RSM
350
V
Forward current
T
C
= 25
°
C
I
F
20
A
Non-repetitive peak forward surge current
*
I
FSM
100
A
Junction temperature
T
j
–40 to +150
°
C
Storage temperature
T
stg
–40 to +150
°
C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 20 mA
1.3
1.4
V
Reverse current
I
RRM
V
RRM
= 300 V
50
m
A
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
15
25
ns
Thermal resistance (j-a)
R
th(j-c)
3.0
°
C/W
Thermal resistance (j-c)
R
th(j-a)
63
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: t
rr
measurement circuit
D.U.T
t
rr
0.25
×
I
R
I
F
I
R
50
Ω
5.5
Ω
50
Ω
Package
Code
TO-220D-A1
Pin Name
1: Anode
2: Cathode
3: Anode
Marking Symbol: MA3DF30
Intemal Connection
1
3
2
