Schottky Barrier Diodes (SBD)
1
Publication date: January 2004
SKH00045BED
MA3D755
(MA7D55)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
■
Features
•
Low forward voltage V
F
•
High dielectric breakdown voltage:
>
5 kV
•
Easy-to-mount, due to its V cut lead end
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
60
V
Forward current (Average)
I
F(AV)
5
A
Non-repetitive peak forward
I
FSM
90
A
surge current
*
Junction temperature
T
j
−
40 to
+
125
°
C
Storage temperature
T
stg
−
40 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
2.5 A
0.58
V
Reverse current
I
R
V
R
=
60 V
1
mA
Thermal resistance (j-c)
R
th(j-c)
3.0
°C/W
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3.0
±
0.5
9.9
±
0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Note) *: Half sine wave; 10 ms/cycle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 200 MHz.
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
3: Anode
TO-220D-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
