Schottky Barrier Diodes (SBD)
1
Publication date: April 2004
SKH00042BED
MA3D749
(MA7D49)
, MA3D749A
(MA7D49A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
■
Features
•
Low forward voltage V
F
•
High dielectric breakdown voltage:
>
5 kV
•
Easy-to-mount, due to its V cut lead end
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak MA3D749
V
RRM
40
V
reverse voltage
MA3D749A
45
Forward current (Average)
I
F(AV)
5
A
Non-repetitive peak forward
I
FSM
90
A
surge current
*
Junction temperature
T
j
−
40 to
+
125
°
C
Storage temperature
T
stg
−
40 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
2.5 A, T
C
=
25
°
C
0.55
V
Reverse current
MA3D749
I
R
V
R
=
40 V, T
C
=
25
°
C
1.0
mA
MA3D749A
V
R
=
45 V, T
C
=
25
°
C
1.0
Thermal resistance (j-c)
R
th(j-c)
3.0
°C/W
■
Electrical Characteristics
T
a
=
25
°
C
±
2
°
C
Unit: mm
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3.0
±
0.5
9.9
±
0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Note) *: Half sine wave; 10 ms/cycle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 200 MHz.
Note) The part numbers in the parenthesis show conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
