Fast Recovery Diodes (FRD)
1
Publication date: March 2004
SKJ00004BED
MA3D652
(MA6D52)
Silicon planar type (cathode common)
For high-frequency rectification
■
Features
•
Low forward voltage V
F
•
Fast reverse recovery time t
rr
•
TO-220D (Full-pack package) with high dielectric breakdown
voltage
•
Easy-to-mount, caused by its V cut lead end
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
200
V
Non-repetitive peak reverse
V
RSM
200
V
surge voltage
Forward current (Average)
I
F(AV)
20
A
Non-repetitive peak forward
I
FSM
100
A
surge current
*
Junction temperature
T
j
−
40 to
+
150
°
C
Storage temperature
T
stg
−
40 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 10 A, T
C
= 25
°
C
1.0
V
Repetitive peak reverse current
I
RRM1
V
RRM
= 200 V, T
C
= 25
°
C
100
µ
A
I
RRM2
V
RRM
= 200 V, T
j
= 150
°
C
10
mA
Reverse recovery time
*
t
rr
I
F
= 1 A, I
R
= 1 A
70
ns
Thermal resistance (j-c)
R
th(j-c)
3.0
°
C/W
Thermal resistance (j-a)
R
th(j-a)
63
°
C/W
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
D.U.T
t
rr
0.1
×
I
R
I
F
I
R
50
Ω
5.5
Ω
50
Ω
1
2
3
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3.0
±
0.5
9.9
±
0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
