1
Publication date: October 2007
SKF00074AED
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2S1010G
Silicon epitaxial planar type
For switching circuits
■
Features
•
High breakdown voltage: V
R
=
250 V
•
Small terminal capacitance C
t
•
Suitable for high-density mounting
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
250
V
Repetitive peak reverse voltage
V
RRM
250
V
Forward current
I
F
100
mA
Peak forward current
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
70 mA
1.2
V
Reverse current
I
R
V
R
=
250 V
1.0
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
3.0
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
10 mA
60
ns
I
rr
=
1 mA , R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
10 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. *: t
rr
measurement circuit
Note) *: t
=
1 s
■
Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■
Marking Symbol: 1P
