Switching Diodes
1
Publication date: October 2007
SKF00073AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J1120G
Silicon epitaxial planar type
For switching circuits
■
Features
•
Allowing high-density mounting
•
Ensuring the forward current (Average) capacity I
F(AV)
=
200 mA
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current (Average)
*1
I
F(AV)
200
mA
Peak forward current
I
FM
600
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*2
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
200 mA
1.1
V
Reverse current
I
R1
V
R
=
15 V
50
nA
I
R2
V
R
=
35 V
500
I
R3
V
R
=
35 V, T
a
=
100
°
C
100
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
4
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
10
ns
I
rr
=
0.1 I
R
, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Note) *1: With a printed-circuit board
*2: t
=
1 s
■
Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
2: Cathode
■
Marking Symbol: 1C
