1
Publication date: March 2004
SKG00001BED
Band Switching Diodes
Marking Symbol: C
MA27077
Silicon epitaxial planar type
For band switching
■
Features
•
Low forward dynamic resistance r
f
•
Less voltage dependence of diode capacitance C
D
•
SSS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■
Absolute Maximum Ratings
T
a
=
25
°
C
1: Anode
2: Cathode
SSSMini2-F1 Package
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Operating ambient temperature
*
T
opr
−
25 to
+
85
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
0.92
1.00
V
Reverse current
I
R
V
R
=
33 V
0.01
100.00
nA
Diode capacitance
C
D
V
R
=
6 V, f
=
1 MHz
0.9
1.2
pF
Forward dynamic resistance
*
r
f
I
F
=
2 mA, f
=
100 MHz
0.65
0.85
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) *: Maximum ambient temperature during operation.
5˚
5˚
0.27
2
1
1.40
±
0.05
0.52
±
0.03
1.00
±
0.05
0.60
±
0.05
0.15 min.
0 to 0.01
0.15 min.
0.15 max.
+0.05
–0.02
0.10
+0.05
–0.02
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
This product complies with the RoHS Directive (EU 2002/95/EC).
