Fast Recovery Diodes (FRD)
Publication date: November 2008
SKJ00022AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24F70
Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic: t
rr
= 15 ns (typ.)
Low impedance by clip bonding package (TMP)
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
700
V
Non-repetitive peak reverse surge voltage
V
RSM
700
V
Forward current
*1
I
F
1.0
A
Non-repetitive peak forward surge current
*2
I
FSM
20
A
Junction temperature
T
j
-40 to +150
°
C
Storage temperature
T
stg
-40 to +150
°
C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 1.0 A
1.3
1.7
V
Reverse current
I
RRM
V
RRM
= 700 V
20
m
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
25
pF
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
15
45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. *: t
rr
measurement circuit
50
Ω
50
Ω
5.5
Ω
D.U.T.
I
F
I
R
0.25
×
I
R
t
rr
Package
Code
TMiniP2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: H1
