Schottky Barrier Diodes (SBD)
Publication date: February 2008
SKH00141CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA22D39
Silicon epitaxial planar type
For high speed switching circuits
Features
Optimum for forward current (Effective value) I
F(RMS)
= 1.57 A recti
fi
cation
Reverse voltage V
R
= 40 V is guaranteed
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current (Effective value)
*1
I
F(RMS)
1.57
A
Non-repetitive peak forward surge current
*2
I
FSM
30
A
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 0.5 A
0.48
V
V
F2
I
F
= 1.1 A
0.54
V
F3
I
F
= 1.5 A
0.57
Reverse current
I
R
V
R
= 40 V
100
m
A
Terminal capacitance
C
t
V
R
= 10 V, f = 1 MHz
50
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100
W
30
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: 3N