Panasonic Light Emitting Diodes LNJ0F1C5FRA1, Specifications

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SHD00438BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2008
1
Light Emitting Diodes
LNJ0F1C5FRA1
Hight Bright Surface Mounting Chip LED
Strobe Type

Absolute Maximum Ratings T
a
= 25 ± 3 ° C
Parameter Symbol Rating Unit
Power dissipation P
D
103 mW
Forward current I
F
25 mA
Pulse forward current I
FP
60 mA
Reverse direct current I
RDC
100 mA
Operating ambient temperature T
opr
–30 to +85 ° C
Storage temperature T
stg
–40 to +100 ° C

Electro-Optical Characteristics T
a
= 25 ° C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity I
O-20
I
F
= 20 mA/chip DC 1500 2000 mcd
Forward voltage V
F
I
F
= 20 mA/chip DC 3.0 3.4 4.0 V
Chromaticity coordinates
x I
F
= 20 mA/chip DC 0.280 0.340

y I
F
= 20 mA/chip DC 0.260 0.410 
0 °
10 °
10 °
20 °
20 °
30 °
30 °
40 ° 40 °
50 ° 50 °
60 ° 60 °
70 ° 70 °
80 ° 80 °
80 °
60 °
40 °
20 °
90 ° 90 °
0 0
0
15
20
10
5
30
25
DC
IFP
40
35
50
45
20 40 60 80 100
0 1.0 1 3 5 10 30 50 100 2.0 3.0 4.0 5.0 6.0 − 20 20 40 60 80 100
10 1
3
5
10
100
300
500
1000
3000
5000
30
50
100
30
50
100
300
500
20 20 40 40 60 60 80 80 100 100
Directive characteristics
I
O
 I
F
I
F
 V
F
I
F
 T
a
Relative luminous intensity (%)
Ambient temperature T
a
( ° C)
Ambient temperature T
a
( ° C)
Forward current
I
F
(mA)
Forward voltage V
F
(V) Forward current I
F
(mA)
Relative luminous intensity (%)
Forward current
I
F
(mA)
Relative luminous intensity  T
a
Luminous intensity
I
O
(mcd
)
Y
X
Y
X

Lighting Color

White