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Transistors

1

Publication date: April 2003

SJC00226BED

2SD1819A

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB1218A

Features

High forward current transfer ratio h

FE

Low collector-emitter saturation voltage V

CE(sat)

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

60

V

Collector-emitter voltage (Base open)

V

CEO

50

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

I

C

100

mA

Peak collector current

I

CP

200

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

=

 10 

µ

A, I

E

 

=

 

0

60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 2 mA, I

B

 

=

 

0

50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 10 

µ

A, I

C

 

=

 

0

7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 20 V, I

E

 

=

 0

0.1

µ

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

=

 10 V, I

B

 

=

 0

100

µ

A

Forward current transfer ratio

h

FE1 

*

V

CE

 = 10 V, I

C

 = 2 mA

160

460

h

FE2

V

CE

 = 2 V, I

C

 = 100 mA

90

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 100 mA, I

B

 

=

 10 mA

0.1

0.3

V

Transition frequency

f

T

V

CB

 

=

 10 V, I

E

 

=

 

2 mA, f 

=

 200 MHz

150

MHz

Collector output capacitance

C

ob

V

CB

 

=

 10 V, I

E

 

=

 0, f 

=

 1 MHz

3.5

pF

(Common base, input open circuited)

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Unit: mm

2.1

±

0.1

1.3

±

0.1

0.3

+0.1

–0.0

2.0

±

0.2

1.25

±

0.10

(0.425)

1

3

2

(0.65) (0.65)

0.2

±

0.1

0.9

±

0.1

0 to 0.1

0.9

+0.2 –0.1

0.15

+0.10

–0.05

10˚

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

S

No rank

h

FE1

160 to 260

210 to 340

290 to 460

160 to 460

Marking symbol

ZQ

ZR

ZS

Z

Product of no-rank is not classified and have no marking symbol for rank.

Marking Symbol: Z

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

SMini3-G1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

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