Panasonic 2SD1450, Specification Sheet

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Transistors
1 Publication date: April 2003 SJC00222BED
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
■
Features
•
Optimum for high-density mounting
•
Allowing supply with the radial taping
•
Low collector-emitter saturation voltage V
CE(sat)
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
25 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
12 V
Collector current I
C
0.5 A
Peak collector current I
CP
1 A
Collector power dissipation P
C
300 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
=
10
µ
A, I
E
=
0 25 V
Collector-emitter voltage (Base open) V
CEO
I
C
=
1 mA, I
B
=
0 20 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 12 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
25 V, I
E
=
0 100 nA
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 2 V, I
C
= 0.5 A 200 800

h
FE2
V
CE
= 2 V, I
C
= 1 A 60
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
=
500 mA, I
B
=
20 mA 0.13 0.40 V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
=
500 mA, I
B
=
20 mA 1.2 V
Transition frequency f
T
V
CB
=
10 V, I
E
= −
50 mA, f
=
200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz 10 pF
(Common base, input open circuited)
ON resistance
*3
R
on
0.6
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
4.0 ±
0.2
0.75 max.
2.0 ±
0.2
0.45
(2.5) (2.5)
0.7 ±
0.1
2 3 1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
(0.8)
15.6
±
0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measurement circuit
Rank R S T No rank
h
FE1
200 to 350 300 to 500 400 to 800 200 to 800
V
V
1 k
Ω
R
on
=
V
B ×
1 000 (
Ω
)
V
A
−
V
B
f
=
1 kHz
V
=
0.3 V
V
B
I
B
=
1 mA
V
A
This product complies with the RoHS Directive (EU 2002/95/EC).