Transistors
1
Publication date: December 2002
SJC00281BED
2SC4626J
Silicon NPN epitaxial planar type
For high-frequency amplification
■
Features
•
Optimum for RF amplification of FM/AM radios
•
High transition frequency f
T
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
0.1
µ
A
Forward current transfer ratio
*
h
FE
V
CB
=
10 V, I
E
=
−
1 mA
70
220
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
1 mA, f
=
200 MHz
150
250
MHz
Noise figure
NF
V
CB
=
10 V, I
E
=
−
1 mA, f
=
5 MHz
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
=
10 V, I
E
=
−
1 mA, f
=
2 MHz
22
50
Ω
Common-emitter reverse transfer
C
re
V
CB
=
10 V, I
E
=
−
1 mA, f
=
10.7 MHz
0.9
1.5
pF
capacitance
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Rank
B
C
No-rank
h
FE
70 to 140
110 to 220
70 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Unit: mm
Marking Symbol: V
0.27
±
0.02
3
1
2
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±
0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).
