Panasonic 2SC2631, Specification Sheet

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Transistors
1 Publication date: March 2003 SJC00117BED
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
■
Features
•
Satisfactory linearity of forward current transfer ratio h
FE
•
High collector-emitter voltage (Base open) V
CEO
•
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
150 V
Collector-emitter voltage (Base open) V
CEO
150 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
750 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
=
100
µ
A, I
B
=
0 150 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
100 V, I
E
=
0 1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
5 V, I
C
=
10 mA 130 330

Collector-emitter saturation voltage V
CE(sat)
I
C
=
30 mA, I
B
=
3 mA 1 V
Transition frequency f
T
V
CB
=
10 V, I
E
= −
10 mA, f
=
200 MHz 160 MHz
Collector output capacitance C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz 3 pF
(Common base, input open circuited)
Noise voltage NV V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB 150 300 mV
R
g
=
100 k
Ω
, Function
=
FLAT
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
5.0 ±
0.2
0.7 ±
0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1 2 3
+0.6
–0.2
4.0 ±
0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
h
FE
130 to 220 185 to 330
This product complies with the RoHS Directive (EU 2002/95/EC).