1
Transistors
Publication date: March 2003
SJC00114BED
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
■
Features
•
Optimum for RF amplification of FM/AM radios
•
High transition frequency f
T
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
15
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
3
V
Base-emitter voltage
V
BE
V
CB
=
6 V, I
E
=
−
1 mA
0.72
V
Forward current transfer ratio
*
h
FE
V
CB
=
6 V, I
E
=
−
1 mA
65
260
Transition frequency
f
T
V
CB
=
6 V, I
E
=
−
1 mA, f
=
100 MHz
450
650
MHz
Reverse transfer capacitance
C
re
V
CB
=
6 V, I
E
=
−
1 mA, f
=
10.7 MHz
0.8
1.0
pF
(Common emitter)
Power gain
G
P
V
CB
=
6 V, I
E
=
−
1 mA, f
=
100 MHz
24
dB
Noise figure
NF
V
CB
=
6 V, I
E
=
−
1 mA, f
=
100 MHz
3.3
dB
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Marking Symbol: U
Rank
C
D
h
FE
65 to 160
100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).