1
Transistors
Publication date: March 2004
SJC00105BED
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
High transition frequency f
T
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SC1473
V
CBO
250
V
(Emitter open)
2SC1473A
300
Collector-emitter voltage 2SC1473
V
CEO
200
V
(Base open)
2SC1473A
300
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
70
mA
Peak collector current
I
CP
100
mA
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1
2 3
+0.6
–0.2
4.0
±
0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SA1473
V
CEO
I
C
=
100
µ
A, I
B
=
0
200
V
(Base open)
2SA1473A
300
Emitter-base voltage (Collector open)
V
EBO
I
E
=
1
µ
A, I
C
=
0
7
V
Collector-emitter cutoff
2SA1473
I
CEO
V
CE
=
120
V, T
a
=
60
°
C, I
B
=
0
1
µ
A
current (Base open)
2SA1473A
V
CE
=
120
V, I
B
=
0
1
Forward current transfer ratio
*
h
FE
V
CE
=
10 V, I
C
=
5 mA
60
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
50 mA, I
B
=
5 mA
1.2
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
10 mA, f
=
200 MHz
50
80
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
10
pF
(Common base, input open circuited)
Rank
Q
R
h
FE
60 to 150
100 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
