Transistors
1
Publication date: April 2007
SJC00355AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1679G
Silicon PNP epitaxial planar type
For low-frequency amplification
■
Features
•
Large collector output capacitance (Common base, input open cir-
cuited) C
ob
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
15
V
Collector-emitter voltage (Base open)
V
CEO
−
10
V
Emitter-base voltage (Collector open)
V
EBO
−
7
V
Collector current
I
C
−
0.5
A
Peak collector current
I
CP
−
1
A
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
h
FE1
130 to 220
180 to 350
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
1 mA, I
B
=
0
−
10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
10 V, I
E
=
0
−
100
nA
Forward current transfer ratio
*1
h
FE1
*2
V
CE
=
−
2 V, I
C
=
−
0.5 A
130
350
h
FE2
V
CE
=
−
2 V, I
C
=
−
1 A
60
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
=
−
0.4 A, I
B
=
−
8 mA
−
0.16
−
0.30
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
=
−
0.4 A, I
B
=
−
8 mA
−
0.8
−
1.2
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
50 mA, f
=
200 MHz
130
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
22
pF
(Common base, input open circuited)
■
Package
•
Code
SMini3-F2
•
Marking Symbol: 3V
•
Pin Name
1. Base
2. Emitter
3. Collector
