Panasonic 2SB1220G, Specification Sheet

Page: 1 / 4

Transistors
1 Publication date: April 2007 SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
150 V
Collector-emitter voltage (Base open) V
CEO
−
150 V
Emitter-base voltage (Collector open) V
EBO
−
5 V
Collector current I
C
−
50 mA
Peak collector current I
CP
−
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −
100
µ
A, I
B
=
0
−
150 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −
10
µ
A, I
C
=
0
−
5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
100 V, I
E
=
0
−
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
= −
5 V, I
C
= −
10 mA 130 450

Collector-emitter saturation voltage V
CE(sat)
I
C
= −
30 mA, I
B
= −
3 mA
−
1 V
Transition frequency f
T
V
CB
= −
10 V, I
E
=
10 mA, f
=
200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −
10 V, I
E
=
0, f
=
1 MHz 4 pF
(Common base, input open circuited)
Noixe voltage NV V
CE
= −
10 V, I
C
= −
1 mA, G
V
=
80 dB 150 mV
R
g
=
100 k
Ω
, Function
=
FLAT
Rank R S T
h
FE
130 to 220 185 to 330 260 to 450
■
Package
•
Code
SMini3-F2
•
Marking Symbol: I
•
Pin Name
1. Base
2. Emitter
3. Collector