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Transistors
1
Publication date: April 2007
SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
150
V
Collector-emitter voltage (Base open)
V
CEO
−
150
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
50
mA
Peak collector current
I
CP
−
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
100
µ
A, I
B
=
0
−
150
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
100 V, I
E
=
0
−
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
5 V, I
C
=
−
10 mA
130
450
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
30 mA, I
B
=
−
3 mA
−
1
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
10 mA, f
=
200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
4
pF
(Common base, input open circuited)
Noixe voltage
NV
V
CE
=
−
10 V, I
C
=
−
1 mA, G
V
=
80 dB
150
mV
R
g
=
100 k
Ω
, Function
=
FLAT
Rank
R
S
T
h
FE
130 to
220
185 to
330
260 to
450
■
Package
•
Code
SMini3-F2
•
Marking Symbol: I
•
Pin Name
1. Base
2. Emitter
3. Collector