Transistors
1
Publication date: April 2007
SJC00349AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2009G
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
•
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
120
V
Collector-emitter voltage (Base open)
V
CEO
−
120
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
20
mA
Peak collector current
I
CP
−
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
120
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
1 mA, I
B
=
0
−
120
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
50 V, I
E
=
0
−
100
nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
50 V, I
B
=
0
−
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
5 V, I
C
=
−
2 mA
180
700
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
20 mA, I
B
=
−
2 mA
−
0.6
V
Transition frequency
f
T
V
CB
=
−
5 V, I
E
=
2 mA, f
=
200 MHz
200
MHz
Noise voltage
NV
V
CE
=
−
40 V, I
C
=
−
1 mA, G
V
= 80 dB
130
mV
R
g
= 100 k
Ω
, Function = FLAT
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
■
Package
•
Code
SMini3-F2
•
Marking Symbol: AR
•
Pin Name
1. Base
2. Emitter
3. Collector
