Transistors
1
Publication date: May 2007
SJC00380AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1791G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656G
■
Features
•
High transition frequency f
T
•
Small collector output capacitance C
ob
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
50
V
Collector-emitter voltage (Base open)
V
CEO
−
50
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
50
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
1 mA, I
B
=
0
−
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
10 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
10 V, I
B
=
0
−
100
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
10 V, I
C
=
−
2 mA
200
500
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
10 mA, I
B
=
−
1 mA
−
0.1
−
0.3
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
2 mA, f
=
200 MHz
250
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
1.5
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Rank
Q
R
h
FE
200 to 400
250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■
Package
•
Code
SSMini3-F3
•
Marking Symbol: AL
•
Pin Name
1. Base
2. Emitter
3. Collector