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©

 Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 2

1

Publication Order Number:

MMT05B350T3/D

MMT05B350T3

Preferred Devices

Product Preview

Thyristor Surge Protectors

High Voltage Bidirectional TSPD

These Thyristor Surge Protective devices (TSPD) prevent

overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.

Secondary protection applications for electronic telecom equipment

at customer premises.

Features

High Surge Current Capability: 50 A 10 x 1000 

m

sec, for Controlled

Temperature Environments

The MMT05B350T3 is used to help equipment meet various

regulatory requirements including: Bellcore 1089, ITU K.20 and
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68

Bidirectional Protection in a Single Device

Little Change of Voltage Limit with Transient Amplitude or Rate

Freedom from Wearout Mechanisms Present in Non−Semiconductor

Devices

Fail−Safe, Shorts When Overstressed, Preventing Continued

Unprotected Operation

Surface Mount Technology (SMT)

 Indicates UL Recognized − File #E210057

Pb−Free Package is Available

MAXIMUM RATINGS 

(T

J

 = 25

°

C unless otherwise noted)

Rating

Symbol

Value

Unit

Off−State Voltage − Maximum

V

DM

300

V

Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (−25

°

C Initial Temperature)

(Notes 1 and 2)

2 x 10 

m

sec

8 x 20 

m

sec

10 x 160 

m

sec

10 x 360 

m

sec

10 x 560 

m

sec

10 x 700 

m

sec

10 x 1000 

m

sec

I

PPS1

I

PPS2

I

PPS3

I

PPS4

I

PPS5

I

PPS6

I

PPS7

±

150

±

150

±

100

±

100

±

70

±

70

±

50

A(pk)

Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave

I

TSM

32

A(pk)

Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A

di/dt

"

300

A/

m

s

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.

This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.

BIDIRECTIONAL TSPD

50 AMP SURGE, 350 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MMT05B350T3

SMB

12 mm Tape & Reel

(2.5 K/Reel)

MT1

MT2

SMB

(No Polarity)

(Essentially JEDEC DO−214AA)

CASE 403C

(

)

MARKING DIAGRAMS

http://onsemi.com

Preferred devices are recommended choices for future use
and best overall value.

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

MMT05B350T3G

SMB

(Pb−Free)

12 mm Tape & Reel

(2.5 K/Reel)

A

= Assembly Location

Y

= Year

WW

= Work Week

RPBM = Specific Device Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

AYWW

RPBM

G

G

Summary of Contents for MMT05B350T3

Page 1: ...m 25 C Initial Temperature Notes 1 and 2 2 x 10 msec 8 x 20 msec 10 x 160 msec 10 x 360 msec 10 x 560 msec 10 x 700 msec 10 x 1000 msec IPPS1 IPPS2 IPPS3 IPPS4 IPPS5 IPPS6 IPPS7 150 150 100 100 70 70 50 A pk Non Repetitive Peak On State Current 60 Hz Full Sign Wave ITSM 32 A pk Maximum Non Repetitive Rate of Change of On State Current Exponential Waveform 100 A di dt 300 A ms Stresses exceeding Ma...

Page 2: ... C Breakdown Voltage I BR 1 0 mA Both polarities V BR 350 V Off State Current VD1 50 V Both polarities Off State Current VD2 VDM Both polarities ID1 ID2 2 0 5 0 mA On State Voltage IT 1 0 A PW 300 ms Duty Cycle 2 Note 3 VT 1 6 3 0 V Breakover Current f 60 Hz VDM 1000 V rms RS 1 0 kW Both polarities IBO 475 mA Holding Current Both polarities Note 3 VS 500 V IT Initiating Current 1 0 A 65 C IH 150 1...

Page 3: ...LSE CURRENT I PP I H Holding Current mA V BO BREAKOVER VOLTAGE VOLTS Figure 3 Maximum Breakover Voltage versus Temperature Figure 4 Typical Holding Current versus Temperature TEMPERATURE C 40 100 TEMPERATURE C 40 0 60 140 TIME sec 100000 1000 100 10 420 320 220 Figure 5 Exponential Decay Pulse Waveform Figure 6 Peak Surge On State Current versus Surge Current Duration Sinusoidal Waveform 40 20 20 ...

Page 4: ...OM EQUIPMENT OUTSIDE PLANT TIP RING GND TELECOM EQUIPMENT OUTSIDE PLANT TIP RING GND TELECOM EQUIPMENT OUTSIDE PLANT TIP RING GND PPTC PPTC HEAT COIL HEAT COIL Polymeric PTC positive temperature coefficient overcurrent protection device ...

Page 5: ...s technical experts SCILLC does not convey any license under its patent rights nor the rights of others SCILLC products are not designed intended or authorized for use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other application in which the failure of the SCILLC product could create a situation where pe...

Page 6: ...Mouser Electronics Authorized Distributor Click to View Pricing Inventory Delivery Lifecycle Information ON Semiconductor MMT05B350T3 MMT05B350T3G MMT08B350T3 ...

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