NXP Semiconductors MKW01Z128, Reference Manual, Page: 520 / 884

Program flash
0
To MCU's
flash controller
Interrupt
Control
registers
Status
registers
Register access
Memory controller
Figure 23-1. Flash Block Diagram
23.1.3 Glossary
Command write sequence — A series of MCU writes to the flash FCCOB register
group that initiates and controls the execution of flash algorithms that are built into the
flash memory module.
Endurance — The number of times that a flash memory location can be erased and
reprogrammed.
FCCOB (Flash Common Command Object) — A group of flash registers that are used
to pass command, address, data, and any associated parameters to the memory controller
in the flash memory module.
Flash block — A macro within the flash memory module which provides the nonvolatile
memory storage.
Flash Memory Module — All flash blocks plus a flash management unit providing
high-level control and an interface to MCU buses.
IFR — Nonvolatile information register found in each flash block, separate from the
main memory array.
Longword — 32 bits of data with an aligned longword having byte-address[1:0] = 00.
NVM — Nonvolatile memory. A memory technology that maintains stored data during
power-off. The flash array is an NVM using NOR-type flash memory technology.
NVM Normal Mode — An NVM mode that provides basic user access to flash memory
module resources. The CPU or other bus masters initiate flash program and erase
operations (or other flash commands) using writes to the FCCOB register group in the
flash memory module.
Chapter 23 Flash Memory Module (FTFA)
MKW01Z128 MCU Reference Manual, Rev. 3, 04/2016
Freescale Semiconductor, Inc. 389