Electrical Characteristics
S12XS Family Reference Manual, Rev. 1.13
Freescale Semiconductor
661
A.1.7
Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Please refer to the temperature rating of the device (C, V, M) with regards to
the ambient temperature T
A
and the junction temperature T
J
. For power
dissipation calculations refer to
Section A.1.8, “Power Dissipation and
.
Table A-2. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series resistance
R1
1500
Ohm
Storage capacitance
C
100
pF
Number of pulse per pin
Positive
Negative
—
—
1
1
Charged Device Number of pulse per pin
Positive
Negative
—
—
3
3
Latch-up
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
Table A-3. ESD and Latch-Up Protection Characteristics
Num
C
Rating
Symbol
Min
Max
Unit
1
C
Human Body Model (HBM)
V
HBM
2000
—
V
2
C
Charge Device Model (CDM) corner pins
Charge Device Model (CDM) edge pins
V
CDM
750
500
—
—
V
3
C
Latch-up current at T
A
= 125
°
C
Positive
Negative
I
LAT
+100
–100
—
—
mA
4
C
Latch-up current at T
A
= 27
°
C
Positive
Negative
I
LAT
+200
–200
—
—
mA
Table A-4. Operating Conditions
Rating
Symbol
Min
Typ
Max
Unit
I/O, regulator and analog supply voltage
V
DD35
3.13
5
5.5
V
NVM logic supply voltage
1
V
DDF
2.7
2.8
2.98
V
Voltage difference V
DDX
to V
DDA
∆
VDDX
refer to
Summary of Contents for MC9S12XS128
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