NXP Semiconductors MC9S12VRP64, Owner Reference Manual

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LINPHY Electrical Specifications
MC9S12VRP Family Reference Manual Rev. 1.3
518 NXP Semiconductors
E.2 Dynamic Electrical Characteristics
Table E-2. Dynamic electrical characteristics of the LINPHY
4
At temperatures above 25°C the current may be naturally limited by the driver, in this case the limitation circuit is not
engaged and the flag is not set.
Characteristics noted under conditions 5.5V<= V
LINSUP
<=18V, -40°C

T
J

150°C unless otherwise noted
1,2,3
. Typical
values reflect the approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Num Ratings Symbol Min Typ Max Unit
1 Minimum duration of wake-up pulse generating a
wake-up interrupt t
WUFR
56 72 120

s
2 TxD-dominant timeout (in IRC periods) t
DTLIM
16388 — 16389

IRC
3 Propagation delay of receiver t
rx_pd
— — 6

s
4 Symmetry of receiver propagation delay rising edge
w.r.t. falling edge t
rx_sym
-2 — 2

s
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NOMINAL SLEW RATE - 20.0KBIT/S
5 Rising/falling edge time (min to max / max to min) t
rise
— 6.5 —

s
6 Over-current masking window (IRC trimmed at 1MHz)
-40°C < TJ < 150°C t
OCLIM
15 — 16

s
7 Duty cycle 1
T
HRec(max)
= 0.744 x V
LINSUP
T
HDom(max)
= 0.581 x V
LINSUP
V
LINSUP
= 5.5V...18V
t
Bit
= 50us
D1 = t
Bus_rec(min)
/ (2 x t
Bit
)
D1 0.396 — —
8 Duty cycle 2
T
HRec(min)
= 0.422 x V
LINSUP
T
HDom(min)
= 0.284 x V
LINSUP
V
LINSUP
= 5.5V...18V
t
Bit
= 50us
D2 = t
Bus_rec(max)
/ (2 x t
Bit
)
D2 — — 0.581
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/S
9 Rising/falling edge time (min to max / max to min) t
rise
13

s
10 Over-current masking window (IRC trimmed at 1MHz)
-40°C < TJ < 150°C t
OCLIM
31 — 32

s
11 Duty cycle 3
T
HRec(max)
= 0.778 x V
LINSUP
T
HDom(max)
= 0.616 x V
LINSUP
V
LINSUP
= 5.5V...18V
t
Bit
= 96us
D3 = t
Bus_rec(min)
/ (2 x t
Bit
)
D3 0.417 — —