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MCU Electrical Specifications
MC9S12VRP Family Reference Manual Rev. 1.3
NXP Semiconductors
497
Table A-9. Thermal Package Characteristics for 48LQFP
A.2
General Purpose I/O Characteristics
This section describes the characteristics of I/O pins.
Num
Rating
Symbol
Min
Typ
Max
Unit
1
Thermal resistance 48LQFP, single sided PCB
(natural convection)
1
2
1
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
2
Per JEDEC JESD51-2 with natural convection for horizontally oriented board. Board meets JESD51-9 specification for
1s or 2s2p board, respectively.
JA
—
80
—
C/W
2
Thermal resistance 48LQFP, double sided PCB
with 2 internal planes (natural convection)
1 2
JA
—
56
—
C/W
3
Thermal resistance 48LQFP, single sided PCB
1
3
(@200 ft/min)
3
Per JEDEC JESD51-6 with forced convection for horizontally oriented board. Board meets JESD51-9 specification for 1s
or 2s2p board, respectively.
JA
—
67
—
C/W
4
Thermal resistance 48LQFP, double sided PCB
with 2 internal planes, (@200 ft/min)
1 3
JA
—
49
—
C/W
5
Junction to Board 48LQFP
4
4
Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured
on the top surface of the board near the package.
JB
—
34
—
C/W
6
Junction to Case 48LQFP
5
5
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
JCtop
—
23
—
C/W
7
Junction to Package Top 48LQFP
6
6
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2.
JT
—
5
—
C/W
Table A-10. 5V I/O Characteristics
1
Conditions are 4.5 V < V
DDX
< 5.5 V junction temperature from –40
C to +150
C, unless otherwise noted.
Num
Rating
Symbol
Min
Typ
Max
Unit
1
Input high voltage
V
IH
0.65*V
DDX
—
—
V
2
Input high voltage
V
IH
—
—
V
DDX
+0.3
V
3
Input low voltage
V
IL
—
—
0.35*V
DDX
V
4
Input low voltage
V
IL
V
SSX
–0.3
—
—
V
5
Input hysteresis
V
HYS
—
250
—
mV
6
Input leakage current (pins in high impedance input
mode)
2
V
in
= V
DDX
or V
SSX
I
in
-1
—
1
A
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