The FTFE module includes a memory controller that executes commands to modify flash
memory contents. An erased bit reads '1' and a programmed bit reads '0'. The
programming operation is unidirectional; it can only move bits from the '1' state (erased)
to the '0' state (programmed). Only the erase operation restores bits from '0' to '1'; bits
cannot be programmed from a '0' to a '1'.
CAUTION
A flash memory location must be in the erased state before
being programmed. Cumulative programming of bits (back-to-
back program operations without an intervening erase) within a
flash memory location is not allowed. Re-programming of
existing 0s to 0 is not allowed as this overstresses the device.
The standard shipping condition for flash memory is erased
with security disabled. Data loss over time may occur due to
degradation of the erased ('1') states and/or programmed ('0')
states. Therefore, it is recommended that each flash block or
sector be re-erased immediately prior to factory programming
to ensure that the full data retention capability is achieved.
16.2.1 Features
The FTFE module includes the following features.
NOTE
See Memories and Memory Interfaces chapter for the exact
amount of flash memory available on your device.
16.2.1.1 Program Flash Memory Features
• Sector size of 2 Kbytes
• Program flash protection scheme prevents accidental program or erase of stored data
• Program flash access control scheme prevents unauthorized access to selected code
segments
• Automated, built-in, program and erase algorithms with verify
• Section programming for faster bulk programming times
• Read access to the program flash block is possible while programming or erasing
data in the data flash block or FlexRAM
Introduction
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NXP Semiconductors
Summary of Contents for Kinetis KE1xZ256
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