NXP Semiconductors freescale semiconductor MC13211, Reference Manual

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MCU Memory
MC1321x Reference Manual, Rev. 1.6
Freescale Semiconductor 11-11
burst programming. The FCDIV register must be initialized before using any FLASH commands. This
must be done only once following a reset.
Figure 11-2. FLASH Program and Erase Flow chart
11.4.4 Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if the following two conditions are met:
1. The next burst program command has been queued before the current program operation has
completed.
2. The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
START
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
NO
YES
FPVIO OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF
(2)
1
0
FCCF?
ERROR EXIT
DONE
(2)
Wait at least four bus cycles b
checking FCBEF or FCCF.
0
FACCERR?
CLEAR ERROR
FACCERR?
WRITE TO FCDIV
(1)
(1)
Only required once
after reset.