EEPROM
Functional Description
MC68HC908AB32
—
Rev. 1.0
Technical Data
MOTOROLA
EEPROM
71
5.4 Functional Description
The 512 bytes of EEPROM is located at $0800–$09FF, and can be
programmed or erased without an additional external high voltage
supply. The program and erase operations are enabled through the use
of an internal charge pump. For each byte of EEPROM, the write/erase
endurance is 10,000 cycles.
5.5 EEPROM Configuration
The 8-bit EEPROM non-volatile register (EENVR) and the 16-bit
EEPROM timebase divider non-volatile register (EEDIVNVR) contain
the default settings for the following EEPROM configurations:
•
Security option
•
Block protection
•
EEPROM timebase reference
EENVR and EEDIVNVR are non-volatile, EEPROM registers. They are
programmed and erased in the same way as EEPROM bytes. The
contents of these registers are loaded into their respective volatile
registers during a MCU reset. The values in these read/write, volatile
registers define the EEPROM configurations.
For EENVR, the corresponding volatile register is the EEPROM array
configuration register (EEACR).
For the EEDIVNVR (two 8-bit registers: EEDIVHNVR and EEDIVLNVR),
the corresponding volatile register is the EEPROM timebase divider
register (EEDIV: EEDIVH and EEDIVL)
Summary of Contents for MC68HC908AB32
Page 1: ...MC68HC908AB32 D REV 1 0 MC68HC908AB32 HCMOS Microcontroller Unit TECHNICAL DATA ...
Page 2: ......
Page 68: ...FLASH Memory Technical Data MC68HC908AB32 Rev 1 0 68 FLASH Memory MOTOROLA ...
Page 84: ...EEPROM Technical Data MC68HC908AB32 Rev 1 0 84 EEPROM MOTOROLA ...
Page 390: ...Ordering Information Technical Data MC68HC908AB32 Rev 1 0 390 Ordering Information MOTOROLA ...
Page 391: ......