
FLASH Memory
FLASH Page Erase Operation
MC68HC908AB32
—
Rev. 1.0
Technical Data
MOTOROLA
FLASH Memory
61
MASS — Mass Erase Control Bit
Setting this read/write bit configures the 32K-byte FLASH array for
mass erase operation.
1 = MASS erase operation selected
0 = MASS erase operation unselected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
4.5 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (128 bytes) of
FLASH
memory to read as logic 1:
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address
range desired.
4. Wait for a time, t
nvs
(min. 10
µ
s)
5. Set the HVEN bit.
6. Wait for a time, t
Erase
(min. 1ms)
7. Clear the ERASE bit.
8. Wait for a time, t
nvh
(min. 5
µ
s)
Summary of Contents for MC68HC908AB32
Page 1: ...MC68HC908AB32 D REV 1 0 MC68HC908AB32 HCMOS Microcontroller Unit TECHNICAL DATA ...
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Page 68: ...FLASH Memory Technical Data MC68HC908AB32 Rev 1 0 68 FLASH Memory MOTOROLA ...
Page 84: ...EEPROM Technical Data MC68HC908AB32 Rev 1 0 84 EEPROM MOTOROLA ...
Page 390: ...Ordering Information Technical Data MC68HC908AB32 Rev 1 0 390 Ordering Information MOTOROLA ...
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