MKS Ophir FPD-IG-175 User Manual Download Page 9

 

FPD-IG-175, FPD-UV-3000, FPD-VIS-300 User Manual

 

 

 

9

 

 
 

Noise Equivalent Power (NEP): 

NEP

 

refers to the amount of optical input power that would generate an 

electric signal that is equal in magnitude to the electrical noise (in the dark). It is a function of the device 
responsivity and the dark current.  Shot noise (

I

shot

) is a source of noise generated by current; in the case 

of reversed biased  diodes operating at high speeds and low signal levels, it is the dominant contributor to 
the total noise. NEP can be calculated from the shot noise and responsivity.  For example,  for the FPD-
UV-3000 with a dark current of <10nA and responsivity of 0.58 A/W at 890 nm, the shot noise will be: 

 

𝐼

𝑠ℎ𝑜𝑡

=   √2𝑞 𝐼

𝑑𝑎𝑟𝑘

=   √2  × 1.6  × 10

−19

𝐴𝑠 × 10  × 10

−9

𝐴 = 0.057 𝑝𝐴√𝑠 =  0.057 𝑝𝐴/√𝐻𝑧

 

 

      

𝑁𝐸𝑃

𝜆

=

𝐼

𝑠ℎ𝑜𝑡

𝑅

𝜆

=

0.057 𝑝𝐴/√𝐻𝑧

0.58 𝐴/𝑊

  = 0.098 𝑝𝑊/√𝐻𝑧

     at 890 nm 

 

       q 

= electron charge = 

1.6  × 10

−19

𝐴𝑠

 

 

Photodiode: 

A semiconductor device that converts photons into an electrical current. 

 

Responsivity: 

In  amps per  watt  (A/W),  responsivity is  the  current  output  of  the  photodiode  per  input 

power,  and  is  determined  by  the  diode  structure.  Responsivity  varies  with  wavelength  and  diode 
material. 

Responsivity  (Irradiance):

  In  V  per  W/cm

2

  is  the  voltage  output  as  a  function  of  the  light  input 

irradiance. This is equal to the responsivity in units of A/W multiplied by the photodiode sensitive area 
and the effective impedance load seen by the photodiode. 

 

Rise Time & Fall Time: 

Rise Time is the time required by a signal to change from a specified low value 

to a specified high value (typically 10% to 90%). Fall Time is the time taken for the amplitude of a pulse 
to  decrease  from  the  specified  high  value  to  the  specified  low  value.  In  photodiodes,  the  junction 
capacitance  is  a  major  factor  contributing  to  the  rise  time  and  fall  times.  Reverse  biasing  of  the 
photodiode is a method used to decrease the junction capacitance and improve the rise and fall times. 

 

 
 
 
 
 
 

FPD-IG-175, FPD-UV-3000, FPD-VIS-300 User Manual 

18 June 2020 

Rev 1.2-2 

 

For the latest version, please visit our website: 

www.ophiropt.com/photonics

. 

 

Summary of Contents for Ophir FPD-IG-175

Page 1: ...www ophiropt com photonics Fasr Photodiode Detectors Fast Photodiode Detectors FPD IG 175 FPD UV 3000 FPD VIS 300 Ophir Optronics Solutions Ltd Temporal Sensors Temporal Sensors User Manual...

Page 2: ...rs 7 VIII Schematic Fast Photodiode Detectors 8 IX Glossary of Terms 8 I Fast Photodiode Detector Overview Ophir s Fast Photodiode Detectors contain PIN photodiodes that utilize the photovoltaic effec...

Page 3: ...maximum recommended signal level and place the detector in the laser beam However it is not necessary for the detector to be located directly in the laser beam to measure properly If the laser beam is...

Page 4: ...For FPD detectors 7Z08350 V Troubleshooting A No signal is seen the first time the detector is used 1 Be certain that the signal is not too high for the scale set on the oscilloscope 2 Is the wavelen...

Page 5: ...h an external power supply should at least receive the voltage that is printed on the plug 5 You can terminate the detector in 1M input of an oscilloscope to obtain a higher output voltage signal but...

Page 6: ...s Voltage VDC 24 9 6 Bias Voltage Source External Batteries Batteries Battery Type NA CR2430 x3 CR2430 x2 Bandwidth 118 MHz 1 2 GHz 2 GHz Dark Current nA 10 0 1 2 Noise Equivalent Power b pW Hz 0 10 0...

Page 7: ...FPD IG 175 FPD UV 3000 FPD VIS 300 User Manual 7 VII Drawings Fast Photodiode Detectors...

Page 8: ...the NEP Dark Current Idark When a photodiode is connected in a circuit and operated in reverse bias mode a small DC current typically nanoamps will flow even without the presence of an optical signal...

Page 9: ...A W responsivity is the current output of the photodiode per input power and is determined by the diode structure Responsivity varies with wavelength and diode material Responsivity Irradiance In V p...

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