Microchip Technology PIC12F1501, Manual

Page: 319 / 402

PIC16(L)F1508/9
DS40001609E-page 320

2011-2015 Microchip Technology Inc.
TABLE 29-6: THERMAL CHARACTERISTICS
TABLE 29-5: MEMORY PROGRAMMING SPECIFICATIONS
Standard Operating Conditions (unless otherwise stated)
Param.
No.
Sym. Characteristic Min. Typ† Max. Units Conditions
Program Memory
Programming Specifications
D110
V
IHH
Voltage on MCLR/V
PP
pin 8.0 — 9.0 V
(Note 2)
D112 V
PBE
V
DD
for Bulk Erase 2.7 — V
DDMAX
V
D113 V
PEW
V
DD
for Write or Row Erase V
DDMIN
— V
DDMAX
V
D114 I
PPPGM
Current on MCLR/V
PP
during
Erase/Write
— 1.0 — mA
D115 I
DDPGM
Current on V
DD
during
Erase/Write
— 5.0 —
mA
Program Flash Memory
D121 E
P
Cell Endurance 10K — — E/W -40

C

T
A

+85

C
(Note 1)
D122 V
PRW
V
DD
for Read/Write V
DDMIN
— V
DDMAX
V
D123 T
IW
Self-timed Write Cycle Time — 2 2.5 ms
D124 T
RETD
Characteristic Retention — 40 — Year Provided no other
specifications are violated
D125 E
HEFC
High-Endurance Flash Cell 100K — — E/W 0

C

T
A

+
60°C,
lower
byte last 128 addresses
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
Self-write and Block Erase.
2:
Required only if single-supply programming is disabled.
Standard Operating Conditions (unless otherwise stated)
Param.
No.
Sym. Characteristic Typ. Units Conditions
TH01

JA
Thermal Resistance Junction to Ambient 62.2

C/W 20-pin DIP package
77.7

C/W 20-pin SOIC package
87.3

C/W 20-pin SSOP package
46.2

C/W 20-pin QFN 4X4mm package
32.8

C/W 20-pin UQFN 4X4mm package
TH02

JC
Thermal Resistance Junction to Case 27.5

C/W
20-pin DIP package
23.1

C/W 20-pin SOIC package
31.1

C/W 20-pin SSOP package
13.2

C/W 20-pin QFN 4X4mm package
27.4

C/W 20-pin UQFN 4X4mm package
TH03 T
JMAX
Maximum Junction Temperature 150

C
TH04 PD Power Dissipation — W PD = P
INTERNAL
+ P
I
/
O
TH05 P
INTERNAL
Internal Power Dissipation — W P
INTERNAL
= I
DD
x V
DD
(1)
TH06 P
I
/
O
I/O Power Dissipation — W P
I
/
O
=

(I
OL
* V
OL
) +

(I
OH
* (V
DD
- V
OH
))
TH07 P
DER
Derated Power — W P
DER
= PD
MAX
(T
J
- T
A
)/

JA
(2)
Note 1:
I
DD
is current to run the chip alone without driving any load on the output pins.
2:
T
A
= Ambient Temperature; T
J
= Junction Temperature