B-4
External Memory Interface Diagram Examples
Figure B.4
512 Kbyte Interface with 150 ns Memory
LSI53C896
MOE/
D[7:0]
8
MAD[7:0]
Bus
CK
Q[7:0]
8
A[7:0]
QE
D[7:0]
CK
Q[7:0]
QE
8
A[15:8]
8
V
DD
MAS0/
MAS1/
8
Note: MAD[2] pulled LOW internally. MAD bus sense logic enabled for 512 Kbytes of slow memory (150 ns
devices, additional time required for HCT139 @ 33 MHz). The HCT374s may be replaced with HCT377s.
HCT374
HCT374
GPIO4
MWE/
VPP
Control
+ 12 V
VPP
Optional - for Flash Memory only, not
required for EEPROMS.
D[7:0]
MAD3
4.7 K
D[2:0]
CK
Q0
Q2
3
HCT377
MAD[2:0]
E
MAD1
4.7 K
MAD3
4.7 K
OE
WE
D[7:0]
A0
A16
.
.
.
OE
WE
D[7:0]
A0
A16
.
.
.
OE
WE
D[7:0]
A0
A16
.
.
.
OE
WE
D[7:0]
A0
A16
.
.
.
A
B
GB
Y0
Y1
Y2
Y3
MCE/
HCT139
CE
CE
CE
CE
27C010-15/28F010-15 Sockets
Bus
*
Summary of Contents for LSI53C896
Page 6: ...vi Preface...
Page 16: ...xvi Contents...
Page 88: ...2 62 Functional Description...
Page 112: ...3 24 Signal Descriptions...
Page 306: ...6 38 Specifications This page intentionally left blank...
Page 310: ...6 42 Specifications This page intentionally left blank...
Page 338: ...6 70 Specifications Figure 6 40 LSI53C896 329 BGA Bottom View...
Page 340: ...6 72 Specifications...
Page 346: ...A 6 Register Summary...
Page 362: ...IX 12 Index...