DC Characteristics
6-5
Table 6.7
8 mA Bidirectional Signals—GPIO0_FETCH/, GPIO1_MASTER/, GPIO2,
GPIO3, GPIO4
Symbol
Parameter
Min
Max
Unit
Test Conditions
V
IH
Input high voltage
2.0
5.55
V
–
V
IL
Input low voltage
−
0.3
0.8
V
–
V
OH
Output high voltage
2.4
V
DD
V
−
8 mA
V
OL
Output low voltage
V
SS
0.4
V
8 mA
I
OZ
3-state leakage
−
10
10
µ
A
–
I
PULL
Pull down current
25
–
µ
A
–
Table 6.8
4 mA Bidirectional Signals—MAD[7:0]
Symbol
Parameter
Min
Max
Unit
Test Conditions
V
IH
Input high voltage
2.0
5.55
V
–
V
IL
Input low voltage
−
0.3
0.8
V
–
V
OH
Output high voltage
2.4
V
DD
V
−
4 mA
V
OL
Output low voltage
V
SS
0.4
V
4 mA
I
OZ
3-state leakage
−
10
10
µ
A
–
I
PULL
Pull up current
25
–
µ
A
–
Table 6.9
4 mA Output Signals—MAS[1:0]/, MCE/, MOE/_TESTOUT
1
, MWE/, TDO
1. MOE/_TESTOUT is not tested for 3-state leakage. It cannot be 3-stated.
Symbol
Parameter
Min
Max
Unit
Test Conditions
V
OH
Output high voltage
2.4
V
DD
V
−
4 mA
V
OL
Output low voltage
V
SS
0.4
V
4 mA
I
OZ
3-state leakage
−
10
10
µ
A
–
Summary of Contents for LSI53C1000
Page 6: ...vi Preface...
Page 16: ...xvi Contents...
Page 28: ...1 12 Introduction...
Page 234: ...4 124 Registers...
Page 314: ...6 40 Specifications This page intentionally left blank...
Page 318: ...6 44 Specifications This page intentionally left blank...
Page 344: ...6 70 Specifications This page intentionally left blank...
Page 350: ...6 76 Specifications Figure 6 42 LSI53C1000 329 Ball Grid Array Bottom view...
Page 352: ...6 78 Specifications...
Page 360: ...A 8 Register Summary...
Page 376: ...IX 12 Index...