Section 3: Test subroutine library reference
S530 Parametric Test System Test Subroutine Library User's Manual
3-14
S530-907-01 Rev. A / September 2015
bvceo2
This subroutine measures collector-emitter breakdown voltage using the
bsweepV
LPTLib function.
Usage
double bvceo2(int
e
, int
b
, int
c
, int
sub
, double
vcemin
, double
vcemax
, int
nstep
, double
ipgm
, double
udelay
, char
type
);
e
Input
The emitter pin of the device
b
Input
The base pin of the device
c
Input
The collector pin of the device
sub
Input
The substrate pin of the device
vcemin
Input
The starting collector-emitter voltage (V
CE
), in volts
vcemax
Input
The ending V
CE
, in volts
nstep
Input
The number of voltage steps
ipgm
Input
The targeted collector-emitter current (I
CE
), in amperes
udelay
Input
The delay between V
CE
steps, in seconds
type
Input
Type of transistor:
"N"
or
"P"
Returns
Output
Collector-emitter voltage:
-1.0
= TYPE not "N" or "P"
+1.0E + 21
= Device triggered on
vcemin
+2.0E + 21
= Device triggered on
vcemax
Details
This subroutine sweeps V
CE
from
vcemin
to
vcemax
while monitoring the collector current with the
base open. When the specified current level (
ipgm
) is reached, the last collector-emitter voltage
increment is returned as
bvceo2
.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the
udelay
parameter to approximate
C
*
vcemax
/
ipgm
, where
C
= Junction capacitance of
the device under test.
V/I polarities
The polarities of
vcemin
,
vcemax
, and
ipgm
are determined by device type.
Source-measure units (SMUs)
SMU1: Forces V
CE
, programmed current limit = 1.25 *
ipgm
, measures I
CEO
