January 2007
185
Intel
®
855GME Chipset and Intel
®
6300ESB ICH Embedded Platform Design Guide
Hub Interface
Note:
HIREF and HI_VSWING is derived from 1.5 V which is the nominal core voltage for the
6300ESB. Voltage supply tolerance for driver voltage must be within a
±
5% range of nominal.
The selected resistor values ensure that the reference voltage tolerance is maintained over the input
leakage specification. The maximum distance from divider to device is four inches (less is better).
Normal care needs to be taken to minimize crosstalk to other signals (< 10-15 mV). When the
single HIREF/HI_VSWING divider circuit is located more than four inches away, then the locally
generated reference divider should be used. Below are four examples of the HIREF/HI_VSWING
divider circuit.
1. Two 0.1 µF capacitors (C1 and C3) should be placed close to the divider.
2. Each 0.01 µF bypass capacitor (C2, C4, C5, and C6) should be placed within 0.25 inches of HIREF/VREF
pin (for C4 and C6) and HI_VSWING pin (for C2 and C5).
Figure 86.
8-Bit Hub Interface Single HIREF/HI_VSWING Generation Circuit Option A
Summary of Contents for 6300ESB ICH
Page 24: ...24 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Introduction...
Page 102: ...102 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide...
Page 122: ...122 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide...
Page 190: ...190 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Hub Interface...
Page 318: ...318 Intel 855GME Chipset and Intel 6300ESB ICH Embedded Platform Design Guide Layout Checklist...
