SPECIFICATIONS
Power Rating:
Less than 0.02% total harmonic distortion at
any power level up to 115 watts continuous average power
per channel into 8 ohms at any frequency between 20 Hz
and 20 kHz with both channels driven.
Input Impedance: 47,OOO
ohms.
Input Sensitivity:
1.55 volts rms for 1 15 watts into 8 ohms.
IM Distortion ( S M P T E )
Less than O.OOS’%, from 1 watt to 1 15
Damping Factor: 300
to
1 kHz into 8 ohms
watts into 8 ohms. 60 to 10
into 8 ohms
Typical THD at 115 watts into 8 ohms:
I
kHz - 0 0 0 2 5 %
__
IO kHz - 0 . 0 0 7 %
20 kHz - 0.012’/‘
Frequency Response into 8 ohms:
- 3 dB. 2 Hz to 160 kHz at 1 watt
+O, -0.5 dB, 6 Hz to 60 kHz at 1 15 watts
Rise Time:
10 kHz. 60 volts peak to peak square wave, 1 0 %
to 9 0 % 2.5 us.
Slew Rate:
10 kHz. 60 volts peak to peak square wave: 30
s.
Semiconductor Complement: 26
transistors. 8 power
Mosfets, 29 diodes, 4 zener diodes. 1 diode bridge.
Typical Channel Separation: 20
Hz:>
75
dB
1 kHz:>85 dB
20
kHz: >6S
dB
Power Consumption:
1 15 watts into 8 ohms: 840 VA;
Quiescent: 125 VA.
Size: 5-1/8” high. 16” wide, 10-l/2” deep.
Signal
to Noise Ratio, unweighted:
Better than 100 dB at 115
watts into 8 ohms.
Net Weight: 26
Ibs.
Shipping Weight: 30
Ibs.
All Specifications are subject to change without notice.
Printed in USA
16
