5 Configuration Mode Introduction
5.2 JTAG Configuration
UG290-2.3E
31(87)
7. Send the "
0x02” instruction of Noop to end the Erasure process.
Note!
You need to wait enough time for the device to finish erasing after the instructions of
EraseSram(0x05) and Noop(0x02) are sent.
The reference time for GW1N(*)-1 is 1ms;
The reference time for GW1N(*)-4 is 2ms;
The reference time for GW1N(*)-9 is 4ms;
The reference time for GW2A(*)-18 is 6ms;
The reference time for GW2A(*)-55 is 10ms.
Erase Internal Flash
For the embedded Flash memory of GW1N series, the embedded
Flash needs to be erased before each programming task. For data security,
the embedded Flash must be erased entirely.
The requirements for JTAG programming frequency are different
according to the different processes of the GW1N series of the embedded
Flash. Please refer to Table 5-8.
Table 5-8 TCK Frequency Requirements for JTAG
Device
TCK Frequency Range Process Code
GW1N-1
GW1N-1S
1.4MHz ~ 5MHz
H
GW1N(RF)-4B
GW1N(SER)-4C
GW1N(R)-9(C)
GW1NZ-1
1MHz ~ 5MHz
T
GW1NS(E)-2(C)
1MHz ~ 5MHz
S
FPGA erasure process of T Technology
The following describes the erase flow of T Technology for GW1NZ-1
in detail, as shown in Figure 5-15.
1. Establish a JTAG link and reset the TAP;
2. Read the device ID CODE and check if it matches.
3. Erase SRAM first if it has been configured.
4. Send the "0x15" instruction of ConfigEnable;
5. Send the "0x75" instruction of EFlash Erase;
6. The clock
(
Run-Test
)
is continuously generated in Run-Test-Idle for
500μs;
7. Move the state machine in turn: Run-Test-ldle -> Select-DR-Scan->
Update-DR -> Capture-DR -> Shift-DR -> Transfer 32 bits-> Exit1-DR ->
Update-DR -> Run-Test-ldle;
8. The clock
(
Run-Test
)
is continuously generated in Run-Test-Idle for
120ms. Please refer to Table 5-8 for the frequency requirements;
9. Send the "0x3A" instruction of ConfigDisabled;
10. Send the "0x02
” instruction of Noop to end the erasure process.
11. Send the "
0x03” instruction of Reprogram to reconfigure the device and
check if it erases successfully.