Memory Controller
MSC8144E Reference Manual, Rev. 3
Freescale Semiconductor
3-11
3.4 Memory Controller
Refer to the memory controller chapter for details on configuring these signals. To support DDR
DRAM external memory, the memory controller uses SSTL2+ signal levels.
Table 3-6. Memory Controller Signals
Signal Name
Type
Description
MA[15–0]
Output
Address Bus
The memory interface address bus used to connect to external memory devices. MA0 is
the lsb of the address driven by the DDR controller.
MBA[2–0]
Output
Bank Address
Selects the DDR DRAM bank. Each DDR SDRAM can support four or eight logically
addressable sub-banks. MBA0 must connect to bit zero of the SDRAM input bank
address. This line is asserted during the mode register set command to specify the
extended mode register.
MDQ[31–0]
Input/
Output
Data Bus
The MSC8144E device drives the bus during write cycles and the external memory
drives the bus during read cycles.
MDM[3–0]
Output
DDR SDRAM Data Output Mask
Masks unwanted data bytes transferred during a burst write. These signals are used to
support sub-burst-size transactions (such as single-byte writes) on SDRAM in which all
transactions occur in multi-byte bursts. MDM0 corresponds to the MSB and MDM3
corresponds to the LSB.
MDQS[3–0]
Input/Output
DDR SDRAM DQS
Strobe for byte-lane data capture. The signals are inputs driven by the DDR SRAM with
read data and outputs driven by the DDR controller with write data. The data strobes
may be single-ended or differential.
MDQS[3–0]
Input/Output
DDR SDRAM DQS Complement
Complement strobe for byte-lane data capture. The signals are inputs driven by the DDR
SRAM with read data and outputs driven by the DDR controller with write data. The data
strobes may be single-ended or differential.
MCK[2–0]
Output
DDR Clock Out
The DDR clock output. Each signal is part of a differential pair.
MCK[2–0
]
Output
DDR Clock Out Inverted
The inverted DDR clock. Each signal is part of a differential pair.
MCKE[1–0]
Output
Clock Enable
When asserted, this signal enables the DDR clock for the DDR DRAM.
MRAS
Output
Row Address Strobe
Connects to DDR DRAM RAS input. This line is asserted for activate commands and is
used for mode register set and refresh commands.
MCAS
Output
Column Address Strobe
Connects to DDR DRAM CAS input. This line is asserted for read or write transactions
and for mode register set, refresh, and precharge commands.
MWE
Output
Write Enable
Connects to DDR DRAM WE input.
MCS[0–1]
Output
Chip Select 0–1
Enables specific memory devices or peripherals connected to the bus.
MECC[7–0]
Input/Output
Error Checking and Correction Codes
As outputs, represent the state of ECC driven by the DDR controller on writes. As inputs,
represents the ECC driven by the DDR SDRAMs on reads.
Summary of Contents for MSC8144E
Page 1: ...MSC8144E Reference Manual Quad Core Media Signal Processor MSC8144ERM Rev 3 July 2009 ...
Page 48: ...MSC8144E Reference Manual Rev 3 xlviii Freescale Semiconductor ...
Page 86: ...MSC8144E Reference Manual Rev 3 1 38 Freescale Semiconductor Overview ...
Page 168: ...MSC8144E Reference Manual Rev 3 3 60 Freescale Semiconductor External Signals ...
Page 242: ...MSC8144E Reference Manual Rev 3 5 26 Freescale Semiconductor Reset ...
Page 314: ...MSC8144E Reference Manual Rev 3 8 24 Freescale Semiconductor General Configuration Registers ...
Page 414: ...MSC8144E Reference Manual Rev 3 10 14 Freescale Semiconductor MSC8144E SC3400 DSP Subsystem ...
Page 452: ...MSC8144E Reference Manual Rev 3 11 38 Freescale Semiconductor Internal Memory Subsystem ...
Page 520: ...MSC8144E Reference Manual Rev 3 12 68 Freescale Semiconductor DDR SDRAM Memory Controller ...
Page 1070: ...MSC8144E Reference Manual Rev 3 21 28 Freescale Semiconductor Timers ...