2N4123
NPN General Purpose Amplifier
2N4123
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Symbol
Characteristic
Max
Units
2N4123
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
200
°
C/W
C
B
E
TO-92
[
[
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
]
2001 Fairchild Semiconductor Corporation
2N4123, Rev A
