DELTA ELECTRONICS, INC.
(TAOYUAN PLANT CPBG)
o
At 25 C: 100KHz, 0.1V
SMT Power Inductor
SISN811 Type
Low profile (11.0mm max. height) SMD type.
Magnetically shielded,suitable for high density mounting.
High energy storage and low DCR.
Provided with embossed carrier tape packing.
Ideal for power source circuits, DC-DC converter,
DC-AC inverters inductor application.
In addition to the standard versions shown here,
customized inductors are available to meet your exact requirements.
Features
Electrical Characteristics:
Mechanical Dimension:
252,SHANGYING ROAD, GUISHAN INDUSTRIAL ZONE, TAOYUAN COUNTY, 33341, TAIWAN, R.O.C.
TEL: 886-3-3591968; FAX: 886-3-3591991
http://www.deltaww.com
A = 13.1 / 0.516 Max.
B = 9.254 0.254 / 0.364 0.01
C = 11.0 / 0.433 Max.
D = 2.5 0.254 / 0.098 0.01
E = 1.2 0.30 / 0.047 0.012
F = 0.80 / 0.031
G = 1.9 / 0.075
H = 3.2 / 0.126
I = 9.6 / 0.378
UNIT : mm / inch
B
C
F
D
E
RECOMMENDED PAD
3.2
9.6
1.9
SISN811-1R0
1.0
0.004
22.0
SISN811-1R5
1.5
0.005
22.0
SISN811-2R2
2.2
0.0058
18.0
SISN811-3R6
3.6
0.010
14.0
SISN811-4R7
4.7
0.009
6.0
SISN811-5R0
5.0
0.010
15.0
SISN811-7R5
7.5
0.0135
6.0
SISN811-100
10.0
0.040
8.0
SISN811-150
15.0
0.050
7.0
SISN811-220
22.0
0.066
5.5
SISN811-330
33.0
0.080
4.0
SISN811-420
42.0
0.100
3.0
SISN811-470
47.0
0.110
3.8
SISN811-680
68.0
0.170
3.0
SISN811-101
100.0
0.220
2.5
SISN811-151
150.0
0.340
2.0
SISN811-221
220.0
0.440
1.6
SISN811-331
330.0
0.700
1.2
SISN811-471
470.0
0.950
1.0
SISN811-681
680.0
1.200
1.0
SISN811-102
1000.0
2.000
0.8
A
1
sat
2
L
(uH)
DCR
( )MAX
I
(Adc)
1. Tolerance of inductance 1.0~1000uH 20%
2. I
sat
is the DC current which cause the inductance drop less than 15% of its nominal inductance without current.
3. Operating temperature : -20
к
to 105
к
(including self-temperature rise).
