CYBLE-224116-01
Document Number: 002-12524 Rev. *D
Page 20 of 47
GPIO
Note
9. V
IH
must not exceed V
DD
+ 0.2 V.
Table 15. GPIO DC Specifications
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
V
IH
[9]
Input voltage HIGH threshold
0.7 × V
DD
– –
V
CMOS
input
LVTTL input, 2.0 V
V
DD
2.7 V
0.7 × V
DD
– –
V
–
LVTTL input, 2.7 V
V
DD
3.6 V
2.0
–
–
V
–
V
IL
Input voltage LOW threshold
–
–
0.3 × V
DD
V
CMOS input
LVTTL input, 2.0 V
V
DD
2.7 V
–
–
0.3 × V
DD
V
–
LVTTL input, 2.7 V
V
DD
3.6 V
–
–
0.8
V
–
V
OH
Output voltage HIGH level
V
DD
–0.6 –
–
V
I
OH
= 4 mA at 3.3-V V
DD
V
OL
Output voltage LOW level
–
–
0.6
V
I
OL
= 8 mA at 3.3-V V
DD
R
PULLUP
Pull-up resistor
3.5
5.6
8.5
k
–
R
PULLDOWN
Pull-down resistor
3.5
5.6
8.5
k
–
I
IL
Input leakage current (absolute value)
–
–
2
nA
25 °C, V
DD
= 3.3 V
I
IL_CTBM
Input leakage on CTBm input pins
–
–
4
nA
–
C
IN
Input capacitance
–
–
7
pF
–
V
HYSTTL
Input hysteresis LVTTL
25
40
–
mV
2.7 V
V
DD
3.6 V
V
HYSCMOS
Input hysteresis CMOS
0.05 × V
DD
– – 1
–
I
DIODE
Current through protection diode to V
DD
/V
SS
– –
100
µA
–
I
TOT_GPIO
Maximum total source or sink chip current
–
–
200
mA
–
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