Cypress EZ-BLE PRoC CYBL11172-56LQXI, Manual

Page: 23 / 39

Document Number: 002-02521 Rev. *F Page 23 of 39
CYBLE-012011-00
CYBLE-012012-10
Memory
T
HSO
Previous MISO data hold time 0 – – ns
T
SSELSCK
SSEL valid to first SCK valid edge 100 – – ns
Table 35. Fixed SPI Slave Mode AC Specifications (continued)
Parameter Description Min Typ Max Units Details/Conditions
Table 36. Flash DC Specifications
Parameter Description Min Typ Max Units Details/Conditions
V
PE
Erase and program voltage 1.71 – 5.5 V –
T
WS48
Number of Wait states at 32–48 MHz 2 – – CPU execution from flash
T
WS32
Number of Wait states at 16–32 MHz 1 – – CPU execution from flash
T
WS16
Number of Wait states for 0–16 MHz 0 – – CPU execution from flash
Table 37. Flash AC Specifications
Parameter Description Min Typ Max Units Details/Conditions
T
ROWWRITE
[9]
Row (block) write time (erase and program) – – 20 ms Row (block) = 128 bytes
T
ROWERASE
[9]
Row erase time – – 13 ms –
T
ROWPROGRAM
[9]
Row program time after erase – – 7 ms –
T
BULKERASE
[9]
Bulk erase time (128 KB) – – 35 ms –
T
DEVPROG
[9]
Total device program time – – 25 seconds –
F
END
Flash endurance 100 K – – cycles –
F
RET
Flash retention. T
A

55 °C, 100 K P/E cycles 20 – – years –
F
RET2
Flash retention. T
A

85 °C, 10 K P/E cycles 10 – – years –
Note
9. It can take as much as 20 ms to write to flash. During this time, the device should not be reset, or flash operations will be interrupted and cannot be relied on to have
completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs. Make
certain that these are not inadvertently activated.