Branson IPC 3000, Operating Manual, Page: 4 / 14

NANOSYSTEM
FABRICATION FACILITY (NFF), HKUST
Version 1.0
Page 4 of 14
descum. Recipes’ parameters are shown below.
Plasma Descum (DESCUM.RCP)
Ramp ambient N
2
flow rate (slpm) 0.45
Temperature at the end of ramp (
o
C) 70
Power during ramp (W) 300
N
2
pressure (Torr) 1.3
Process O
2
flow rate (slpm) 0.45
Temperature at the end of ash (
o
C) 75
Power during ash (W) 150
O
2
pressure (Torr) 1.3
Ash time (minutes) 1
Photoresist Stripping (Striper.RCP)
Ramp ambient N
2
flow rate (slpm) 0.45
Temperature at the end of ramp (
o
C) 100
Power during ramp (W) 300
N
2
pressure (Torr) 1.3
Process O
2
flow rate (slpm) 0.45
Temperature at the end of ash (
o
C) 200
Power during ash (W) 300
O
2
pressure (Torr) 1.3
Ash time (minutes) 20
NOTE: Please consult with NFF staff for the feasibility if you request to run the
process by your own recipe.