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Publication date: October 2007

SKL00022AED

PIN diodes

This product complies with the RoHS Directive (EU 2002/95/EC).

MA27P010G

Silicon epitaxial planar type

For high frequency switch

Features

Small terminal capacitance C

t

Small forward dynamic resistance r

f

Ultraminiature package and surface mounting type
1.0 mm 

×

 0.6 mm (height: 0.52 mm)

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

60

V

Forward current

I

F

100

mA

Power dissipation 

*

P

D

150

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

=

 10 mA

1.0

V

Reverse current

I

R

V

R

 

=

 60 V

100

nA

Terminal capacitance

C

t

V

R

 

=

 1 V, f 

=

 1 MHz

0.8

pF

Forward dynamic resistance 

*

r

f

I

F

 

=

 10 mA, f 

=

 100 MHz

1.0

Electrical Characteristics  

T

a

 = 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. *: r

f

 measurement device ; agilent model 4291B

Note) *: With a glass epoxy PC board

Package

Code
SSSMini2-F3

Pin Name

1: Anode
2: Cathode

Marking Symbol: N

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