Panasonic 2SA1739G, Specification Sheet

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Transistors
1 Publication date: April 2007 SJC00347AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1739G
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938G
■
Features
•
High speed switching
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
15 V
Collector-emitter voltage (Base open) V
CEO
−
15 V
Emitter-base voltage (Collector open) V
EBO
−
4 V
Collector current I
C
−
50 mA
Peak collector current I
CP
−
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
8 V, I
E
=
0
−
0.1
µ
A
Emitter-base cutoff current (Collector open) I
EBO
V
CE
= −
3 V, I
C
=
0
−
0.1
µ
A
Forward current transfer ratio h
FE1
*
V
CE
= −
1 V, I
C
= −
10 mA 50 150

h
FE2
V
CE
= −
1 V, I
C
= −
1 mA 30
Collector-emitter saturation voltage V
CE(sat)
I
C
= −
10 mA, I
B
= −
1 mA
−
0.1
−
0.2 V
Transition frequency f
T
V
CB
= −
10 V, I
E
=
10 mA, f
=
200 MHz 800 1 500 MHz
Collector output capacitance C
ob
V
CB
=
−
5 V, I
E
= 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time t
on
Refer to the switching time
12 ns
Turn-off time t
off
measurement circuit 20 ns
Storage time t
stg
19 ns
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R No-rank
h
FE1
50 to 120 90 to 150 50 to 150
Marking symbol AXQ AXR AX
Product of no-rank is not classified and have no marking symbol for rank.
■
Package
•
Code
SMini3-F2
•
Marking Symbol: AX
•
Pin Name
1. Base
2. Emitter
3. Collector